IRF5305PBF

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IRF5305PBF

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MOSFET P-CH 55V 31A TO220AB

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Specifications

Attribute Value
Package Tube
Series HEXFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 31A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 60mOhm @ 16A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 63 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1200 pF @ 25 V
PowerDissipation(Max) 110W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Overview

Description

The IRF5305PBF is an N-channel power MOSFET from Infineon, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 55V
- Current Rating: 31A (continuous)
- Low On-Resistance (RDS(on)): 0.06Ω (max at 10V VGS)
- Fast Switching: Suitable for PWM and motor control
- Package: TO-220AB (through-hole, easy to mount)
Common uses include power supplies, DC-DC converters, motor drivers, and LED lighting. Its low gate charge (28nC) ensures efficient high-frequency operation. The PBF suffix indicates lead-free (RoHS-compliant) construction.
For optimal performance, ensure proper gate drive (≥10V recommended) and heat dissipation due to its 88W power dissipation capability. Always refer to the datasheet for detailed specifications.

Equivalent

Equivalent products to the IRF5305PBF (N-channel MOSFET, 55V, 31A, 44mΩ) include:
- IRF5305SPBF (Same specs, different package)
- IRFZ44N (55V, 49A, 22mΩ)
- IRF540N (100V, 33A, 44mΩ)
- STP55NF06L (60V, 55A, 20mΩ)
- FQP30N06L (60V, 32A, 35mΩ)
Check datasheets for exact compatibility in your circuit.

Features

The IRF5305PBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 55V drain-to-source (VDSS)
- Current Rating: 31A continuous (ID) at 25°C
- Low On-Resistance: 44mΩ (max) at VGS = 10V
- Fast Switching: Suitable for high-efficiency applications
- Gate Drive Voltage (VGS): ±20V max, 10V recommended for full enhancement
- Power Dissipation: 110W (with proper heatsinking)
- Package: TO-220AB (through-hole, easy to mount)
- Applications: Power supplies, motor control, DC-DC converters
It offers robust performance in switching circuits with low conduction losses.

Pinout

The IRF5305PBF is a Power MOSFET in a TO-220AB package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- N-Channel MOSFET
- 55V Drain-Source Voltage (VDS)
- 31A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on) = 0.06Ω)
- Fast switching for power applications
Commonly used in DC-DC converters, motor control, and power switching circuits.

Application

The IRF5305PBF, an N-channel MOSFET, is commonly used in:
1. Power Switching – Efficiently controls high-current loads in DC-DC converters, motor drivers, and relay replacements.
2. Automotive Systems – Powers lighting, solenoids, and other 12V/24V applications.
3. Power Supplies – Used in SMPS (switched-mode power supplies) for fast switching.
4. Audio Amplifiers – Enhances output stages in Class-D amplifiers.
5. Industrial Equipment – Drives actuators, pumps, and other high-power devices.
Its 55V drain-source voltage and 31A current rating make it versatile for medium-power applications.

Package

The IRF5305PBF is packaged in a TO-220AB type. This through-hole package is widely used for power transistors, offering good thermal performance and ease of mounting on heatsinks. It has three leads (Gate, Drain, Source) and is suitable for high-power applications.

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