IRF530PBF vs IRF5305PBF Comparison
This in-depth comparison of the IRF5305PBF and IRF530PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TO-220
TO-220-3
Description
MOSFET P-CH 55V 31A TO220AB
MOSFET N-CH 100V 14A TO220AB
Series
HEXFET®
-
Part Status
Active
Active
FET Type
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
100 V
Current - Continuous Drain(Id) @ 25°C
31A (Tc)
14A (Tc)
Drive Voltage(Max Rds On Min Rds On)
10V
10V
Rds On(Max) @ Id Vgs
60mOhm @ 16A, 10V
160mOhm @ 8.4A, 10V
Vgs(th)(Max) @ Id
4V @ 250µA
4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
63 nC @ 10 V
26 nC @ 10 V
Vgs(Max)
±20V
±20V
Input Capacitance(Ciss)(Max) @ Vds
1200 pF @ 25 V
670 pF @ 25 V
Power Dissipation (Max)
110W (Tc)
88W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Through Hole
