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IRFB3307PBF
+BOMMOSFET N-CH 75V 130A TO220AB
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ManufacturerInfineon Technologies
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Mfr. Part #IRFB3307PBF
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Datasheet IRFB3307PBF DataSheet
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Package TO-220-3
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In Stock7797
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Specifications
| Attribute | Value |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 75 V |
| Current-ContinuousDrain(Id)@25°C | 130A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 6.3mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5150 pF @ 50 V |
| PowerDissipation(Max) | 200W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Overview
Description
The transistor is built with advanced process technology to minimize on-resistance (R_DS(on)), thus reducing power loss and heat generation. This makes it ideal for use in environments where thermal management is crucial, such as in power supplies, motor drives, and DC-DC converters.
The IRFB3307PBF comes in a TO-220 package that offers efficient thermal characteristics and ease of mounting. It is RoHS compliant, ensuring it meets environmental standards. Overall, the IRFB3307PBF is a versatile and efficient choice for designers looking to improve the performance and reliability of their electronic systems.
Equivalent
1. STP180N55F3 from STMicroelectronics.
2. FDP039AN08A0 from ON Semiconductor.
3. IPB180N06S4-04 from Infineon Technologies.
4. AOT480 from Alpha & Omega Semiconductor.
These equivalents should have similar electrical characteristics, including voltage and current ratings, but always verify the datasheets to ensure compatibility.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_ds) of 75V and can handle a continuous drain current (I_d) of up to 210A at 25°C.
2. R_DS(on): The on-resistance is low, typically around 4.5 mΩ, which minimizes power losses and improves efficiency.
3. Package: It comes in a TO-220 package, which is widely used for its balance between size and power dissipation.
4. Technology: Built on advanced HEXFET® technology, providing ruggedness and reliability.
5. Applications: Suitable for high-efficiency applications like DC-DC converters, motor drives, and switching regulators.
6. Thermal Performance: The device features a maximum junction temperature (T_j) of 175°C, allowing for operation in demanding thermal environments.
These features make the IRFB3307PBF an ideal choice for high-performance power management applications.
Pinout
Pin Count:
The IRFB3307PBF comes in a standard TO-220 package, which has 3 pins.
Pin Functions:
1. Gate (G): This pin is used to control the on/off state of the MOSFET. Applying a suitable voltage to the gate controls the flow of current between the drain and source.
2. Drain (D): This pin is the terminal through which the load current enters. It is connected to the high voltage side of the circuit.
3. Source (S): This pin is the terminal through which the load current exits. It is typically connected to the ground or the low voltage side of the circuit.
The IRFB3307PBF is optimized for applications requiring high efficiency and fast switching, making it suitable for use in DC-DC converters, synchronous rectification, and motor drives.