IRFB3806PBF vs IRFB3307PBF Comparison
This in-depth comparison of the IRFB3307PBF and IRFB3806PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TO-220-3
TO-220-3
Description
MOSFET N-CH 75V 130A TO220AB
MOSFET N-CH 60V 43A TO220AB
Series
HEXFET®
HEXFET®
Part Status
Active
Active
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
60 V
Current - Continuous Drain(Id) @ 25°C
130A (Tc)
43A (Tc)
Drive Voltage(Max Rds On Min Rds On)
10V
10V
Rds On(Max) @ Id Vgs
6.3mOhm @ 75A, 10V
15.8mOhm @ 25A, 10V
Vgs(th)(Max) @ Id
4V @ 150µA
4V @ 50µA
Gate Charge(Qg)(Max) @ Vgs
180 nC @ 10 V
30 nC @ 10 V
Vgs(Max)
±20V
±20V
Input Capacitance(Ciss)(Max) @ Vds
5150 pF @ 50 V
1150 pF @ 50 V
Power Dissipation (Max)
200W (Tc)
71W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Through Hole
