IRFB3077PBF vs IRFB3307PBF

This in-depth comparison of the IRFB3077PBF and IRFB3307PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB3077PBF

+BOM

4658 PCS | International Rectifier
IRFB3307PBF

+BOM

7797 PCS | Infineon Technologies
Package TO-220 TO-220-3
Description IRFB3077 - 12V-300V N-CHANNEL PO MOSFET N-CH 75V 130A TO220AB
Series HEXFET® HEXFET®
ProductStatus Active Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V 75 V
Current-ContinuousDrain(Id)@25°C 120A (Tc) 130A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 3.3mOhm @ 75A, 10V 6.3mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 150µA
GateCharge(Qg)(Max)@Vgs 220 nC @ 10 V 180 nC @ 10 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 9400 pF @ 50 V 5150 pF @ 50 V
PowerDissipation(Max) 370W (Tc) 200W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole
Comparison Model : IRFB3077PBF IRFB3307PBF

+BOM RFQ