IRFB4020PBF vs IRFB4019PBF

This in-depth comparison of the IRFB4019PBF and IRFB4020PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB4019PBF

+BOM

6417 PCS | International Rectifier
IRFB4020PBF

+BOM

1864 PCS | Infineon Technologies
Package TO-220-3 TO-220
Description IRFB4019 - 12V-300V N-CHANNEL PO MOSFET N-CH 200V 18A TO220AB
ProductStatus Active Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V 200 V
Current-ContinuousDrain(Id)@25°C 17A (Tc) 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 95mOhm @ 10A, 10V 100mOhm @ 11A, 10V
Vgs(th)(Max)@Id 4.9V @ 50µA 4.9V @ 100µA
GateCharge(Qg)(Max)@Vgs 20 nC @ 10 V 29 nC @ 10 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 800 pF @ 50 V 1200 pF @ 50 V
PowerDissipation(Max) 80W (Tc) 100W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole
Comparison Model : IRFB4019PBF IRFB4020PBF

+BOM RFQ