IRFB4615PBF vs IRFB4019PBF

This in-depth comparison of the IRFB4019PBF and IRFB4615PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB4019PBF

+BOM

6417 PCS | International Rectifier
IRFB4615PBF

+BOM

7060 PCS | International Rectifier
Package TO-220-3 TO-220-3
Description IRFB4019 - 12V-300V N-CHANNEL PO IRFB4615 - 12V-300V N-CHANNEL PO
ProductStatus Active Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V 150 V
Current-ContinuousDrain(Id)@25°C 17A (Tc) 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 95mOhm @ 10A, 10V 39mOhm @ 21A, 10V
Vgs(th)(Max)@Id 4.9V @ 50µA 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 20 nC @ 10 V 26 nC @ 10 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 800 pF @ 50 V 1750 pF @ 50 V
PowerDissipation(Max) 80W (Tc) 144W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole
Series - HEXFET®
Comparison Model : IRFB4019PBF IRFB4615PBF

+BOM RFQ