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SIC MOSFET 1700 V 28 MOHM M1 SER
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Manufactureronsemi
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Mfr. Part #NTH4L028N170M1
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Datasheet NTH4L028N170M1 DataSheet
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In Stock8846
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Specifications
| Attribute | Value |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 81A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 60A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 20 V |
| Vgs (Max) | +25V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 4230 pF @ 800 V |
| Power Dissipation (Max) | 535W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
| Base Product Number | NTH4L02 |
Overview
Description
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To understand the significance of "NTH4L028N170M1," it would be essential to know the system or context it belongs to, such as a specific database, organization, or industry. If you have access to the source or database where this code is used, consulting that resource can provide more specific information regarding its meaning and application.
Equivalent
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Manufacturer
Application
1. Power Supply Units: Used in AC-DC and DC-DC converters for efficient power management.
2. Motor Drives: Employed in industrial and consumer motor control systems.
3. Automotive Systems: Utilized in electric and hybrid vehicle power systems.
4. Renewable Energy: Integrated into solar inverters and wind turbine converters.
5. Telecommunications: Used in power amplification and power regulation circuits.
These applications benefit from the MOSFET’s low on-resistance and high-speed switching characteristics, enhancing efficiency and performance.