QS8K13TCR

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QS8K13TCR

+BOM

MOSFET 2N-CH 30V 6A TSMT8

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Specifications

Attribute Value
Supplier Rohm Semiconductor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain(Id) @ 25°C 6A
Rds On(Max) @ Id Vgs 28mOhm @ 6A, 10V
Vgs(th)(Max) @ Id 2.5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 20nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 390pF @ 10V
Power - Max 550mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount

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