SI4532DY

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SI4532DY

+BOM

POWER FIELD-EFFECT TRANSISTOR, 3

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Specifications

Attribute Value
Supplier Rochester Electronics, LLC
Package / Case Bulk
Part Status Active
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain(Id) @ 25°C 3.9A, 3.5A
Rds On(Max) @ Id Vgs 65mOhm @ 3.9A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 15nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 235pF @ 10V
Power - Max 900mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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