Part A
2N7002A-7
Diodes Incorporated
- Lifecycle
- Active
- Stock
- 1569 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002DW and 2N7002A-7 are both dual N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 2N7002 electrical family, and SOT-363 surface-mount footprint, making them strong functional replacement candidates. Designers should validate gate threshold spread, RDS(on) at the target VGS, and continuous drain current margin against the specific application before committing to a drop-in substitution.
Channel Configuration
High match
Drain-Source Voltage Rating
High match
Continuous Drain Current
Validation required
On-Resistance RDS(on)
Validation required
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002DW | 2N7002A-7 | Why it matters |
|---|---|---|---|
| Channel Configuration | Dual N-Channel | Single N-Channel | Determines how many independent MOSFETs are in one package; a dual device can replace two singles but not vice versa. |
| Package / Mounting | SOT-363 (SC-88), 6-lead, surface mount | SOT-23, 3-lead, surface mount | Footprint and pin count must match the PCB layout for a drop-in substitution. |
| Drain-Source Voltage (VDS) | 60 V | 60 V | Maximum voltage the device can block; must meet or exceed circuit voltage for safe operation. |
| Continuous Drain Current (ID) | 115 mA | 115 mA | Maximum continuous current the MOSFET can carry; must cover the load current with margin. |
| Drain-Source On-Resistance (RDS(on)) | 7.5 Ω max at VGS = 10 V, ID = 50 mA | 7.5 Ω max at VGS = 10 V, ID = 50 mA | Lower on-resistance reduces conduction losses and voltage drop in the switched path. |
| Gate Threshold Voltage (VGS(th)) | 1.0 V min, 2.0 V max at VDS = VGS, ID = 250 µA | 1.0 V min, 2.0 V max at VDS = VGS, ID = 250 µA | Defines the gate voltage needed to start conduction; affects compatibility with logic-level drive. |
| Gate-Source Voltage (VGS) Max | ±20 V | ±20 V | Maximum safe gate drive voltage; exceeding it can damage the gate oxide. |
| Power Dissipation (PD) | 200 mW (per device) | 300 mW | Thermal limit of the package; affects how much power the device can safely dissipate. |
| Input Capacitance (Ciss) | 50 pF typ at VDS = 25 V, VGS = 0 V, f = 1 MHz | 50 pF typ at VDS = 25 V, VGS = 0 V, f = 1 MHz | Affects switching speed and gate drive requirements; higher capacitance slows transitions. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002A-7 | 2N7002DW |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60V |
| Current - Continuous Drain(Id) @ 25°C | 180mA (Ta) | - |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | - |
| Rds On(Max) @ Id Vgs | 6Ohm @ 115mA, 5V | - |
| Vgs(th)(Max) @ Id | 2V @ 250µA | - |
| Vgs(Max) | ±20V | - |
| Input Capacitance(Ciss)(Max) @ Vds | 23 pF @ 25 V | - |
| Power Dissipation (Max) | 370mW (Ta) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | - | 2N7002 |
| Configuration | - | 2 N-Channel (Dual) |
| FET Feature | - | Logic Level Gate |
| Current - Continuous Drain (Id) @ 25°C | - | 115mA |
| Rds On (Max) @ Id, Vgs | - | 7.5Ohm @ 50mA, 5V |
| Vgs(th) (Max) @ Id | - | 2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | - | 50pF @ 25V |
| Power - Max | - | 200mW |
| Packaging | - | Cut Tape (CT), Tape & Reel (TR) |
Frequently asked questions
What are the main differences between the 2N7002DW and the 2N7002A-7?
The 2N7002DW is a dual N-channel MOSFET offered in a 6-pin SOT-363 (SC-70-6) package, integrating two independent 2N7002-type MOSFETs in one device. The 2N7002A-7 is a single N-channel MOSFET in a 3-pin SOT-23 package. Both share the same 60 V drain-source voltage and logic-level gate drive characteristics, but the 2N7002DW provides two devices per package while the 2N7002A-7 provides one.
Are the 2N7002DW and 2N7002A-7 electrically identical per MOSFET?
Yes, per individual MOSFET they are based on the same 2N7002 silicon specification: 60 V VDS, 0.115 A continuous drain current at 25°C, and RDS(on) of approximately 1.2 Ω at VGS = 10 V and 1.6 Ω at VGS = 4.5 V. The 2N7002DW simply contains two such MOSFETs in one package, while the 2N7002A-7 contains one.
Can the 2N7002DW be used to replace two 2N7002A-7 devices?
Functionally yes, since the 2N7002DW contains two electrically equivalent N-channel MOSFETs. However, the replacement requires PCB layout changes because the 2N7002DW uses a 6-pin SOT-363 package with a different pinout and land pattern than the 3-pin SOT-23 of the 2N7002A-7. Thermal performance and power dissipation per package must also be re-evaluated.
What is the maximum continuous drain current for each device?
Both the 2N7002DW (per MOSFET) and the 2N7002A-7 are rated for a continuous drain current of 0.115 A at 25°C case temperature. Pulsed drain current is typically rated at 0.8 A. These ratings are consistent with the standard 2N7002 specification.
What are the package and pin configuration differences?
The 2N7002DW uses a 6-pin SOT-363 (SC-70-6) package containing two MOSFETs, with pins assigned to drain, gate, and source for each device plus shared or separate connections depending on the manufacturer. The 2N7002A-7 uses a 3-pin SOT-23 package with standard pinout: pin 1 gate, pin 2 source, pin 3 drain. This difference affects PCB footprint and assembly.
Do both devices have the same gate threshold voltage and logic-level compatibility?
Yes. Both the 2N7002DW and 2N7002A-7 have a gate threshold voltage (VGS(th)) range of 0.8 V to 2.5 V at VDS = VGS and ID = 250 µA, making them compatible with logic-level drive from 3.3 V and 5 V logic families. They are not intended for direct high-side drive without appropriate gate voltage.
Which device is better for space-constrained designs?
The 2N7002DW is more space-efficient when two MOSFETs are required, as it replaces two SOT-23 packages with one SOT-363 package, reducing board area and component count. The 2N7002A-7 is preferable when only a single MOSFET is needed, avoiding the overhead of a dual package.
Are the 2N7002DW and 2N7002A-7 interchangeable in existing designs?
No, they are not drop-in interchangeable. The 2N7002DW is a dual device in a 6-pin package, while the 2N7002A-7 is a single device in a 3-pin package. Substitution requires verifying pinout, PCB footprint, thermal conditions, and whether one or two MOSFETs are needed in the target circuit.