Part A
2N7002NXAKR
Nexperia USA Inc.
- Lifecycle
- Active
- Stock
- 2910 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002DW and 2N7002NXAKR are both dual N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 2N7002-class threshold and RDS(on) characteristics, and SOT-363 (SC-88) footprint, making the 2N7002NXAKR a viable functional substitute for the 2N7002DW in most low-power switching and level-shifting applications. Designers should confirm continuous drain current margin, gate-threshold spread, and thermal derating against the target circuit before committing to a drop-in replacement.
Drain-Source Voltage Rating
High match
Package Type
High match
Continuous Drain Current
Validation required
On-Resistance RDS(on)
Validation required
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002DW | 2N7002NXAKR | Why it matters |
|---|---|---|---|
| Channel Configuration | Dual N-Channel | Single N-Channel | Determines how many independent MOSFETs are in one package; a dual device can replace two singles but not vice versa. |
| Drain-Source Voltage (Vds) | 60 V | 60 V | Maximum voltage the device can block; must meet or exceed the circuit's rail and transient voltage. |
| Continuous Drain Current (Id) | 115 mA | 300 mA | Sets the maximum load current the MOSFET can carry continuously; higher rating allows driving heavier loads. |
| Rds(on) at Vgs = 10 V | 7.5 Ω | 1.6 Ω | On-resistance directly affects conduction losses and voltage drop; lower Rds(on) means less heat and higher efficiency. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | 1.1 V to 2.1 V | Determines the gate voltage needed to turn the device on; affects compatibility with low-voltage logic drive. |
| Package / Mounting | SOT-363 (SC-88), Surface Mount | SOT-23 (TO-236AB), Surface Mount | Footprint and pinout must match the PCB layout for a drop-in replacement. |
| Power Dissipation | 200 mW | 420 mW | Maximum power the package can dissipate; higher rating supports more demanding switching or linear operation. |
| Number of Pins | 6 | 3 | Pin count affects board layout and whether the part is a direct physical substitute. |
| Input Capacitance (Ciss) | 50 pF | 20 pF | Influences switching speed and gate drive requirements; lower capacitance enables faster switching. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002NXAKR | 2N7002DW |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60V |
| Current - Continuous Drain(Id) @ 25°C | 190mA (Ta), 300mA (Tc) | - |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | - |
| Rds On(Max) @ Id Vgs | 4.5Ohm @ 100mA, 10V | - |
| Vgs(th)(Max) @ Id | 2.1V @ 250µA | - |
| Gate Charge(Qg)(Max) @ Vgs | 0.43 nC @ 4.5 V | - |
| Vgs(Max) | ±20V | - |
| Input Capacitance(Ciss)(Max) @ Vds | 20 pF @ 10 V | - |
| Power Dissipation (Max) | 265mW (Ta), 1.33W (Tc) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | - | 2N7002 |
| Configuration | - | 2 N-Channel (Dual) |
| FET Feature | - | Logic Level Gate |
| Current - Continuous Drain (Id) @ 25°C | - | 115mA |
| Rds On (Max) @ Id, Vgs | - | 7.5Ohm @ 50mA, 5V |
| Vgs(th) (Max) @ Id | - | 2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | - | 50pF @ 25V |
| Power - Max | - | 200mW |
| Packaging | - | Cut Tape (CT), Tape & Reel (TR) |
Frequently asked questions
What are the main differences between the 2N7002DW and the 2N7002NXAKR?
The 2N7002DW is a dual N-channel enhancement-mode MOSFET typically supplied in a 6-pin SOT-363 (SC-88) package, while the 2N7002NXAKR is a single N-channel enhancement-mode MOSFET supplied in a 3-pin SOT-23 (TO-236AB) package. The 2N7002DW integrates two electrically isolated MOSFETs in one package, whereas the 2N7002NXAKR contains one MOSFET. Both share the 2N7002 family's 60 V drain-source voltage rating and logic-level gate drive characteristics, but their channel count, pin count, and package footprint differ.
Can the 2N7002DW and 2N7002NXAKR be used interchangeably in a design?
No, they are not pin-for-pin or function-for-function interchangeable. The 2N7002DW is a dual device in a 6-pin SOT-363 package, while the 2N7002NXAKR is a single device in a 3-pin SOT-23 package. Substitution requires verifying channel count, PCB land pattern, pin assignment, thermal performance, and any circuit-specific requirements against the respective manufacturer datasheets.
Do the 2N7002DW and 2N7002NXAKR have the same drain-source voltage and current ratings?
Both devices are rated for a maximum drain-source voltage (VDS) of 60 V, consistent with the 2N7002 family. Continuous drain current (ID) ratings differ by package and manufacturer: the 2N7002DW dual MOSFET is typically rated around 115 mA per channel, while the 2N7002NXAKR single MOSFET is typically rated around 300 mA. Exact values must be confirmed from the specific manufacturer datasheet, as ratings depend on package thermal limits and test conditions.
Are the gate threshold voltages of the 2N7002DW and 2N7002NXAKR compatible with logic-level drive?
Yes. Both are logic-level N-channel MOSFETs with a gate threshold voltage (VGS(th)) typically in the range of 1.0 V to 2.5 V, allowing them to be driven directly from 3.3 V or 5 V logic outputs. Designers should still verify the worst-case VGS(th) and RDS(on) specifications from the applicable manufacturer datasheet for the target operating conditions.
What package types are used for the 2N7002DW and 2N7002NXAKR?
The 2N7002DW is housed in a 6-pin SOT-363 (also known as SC-88 or SC-70-6) surface-mount package. The 2N7002NXAKR is housed in a 3-pin SOT-23 (also known as TO-236AB) surface-mount package. These packages have different footprints, pin counts, and PCB land patterns, so they are not drop-in replacements for each other.
Which device is better for space-constrained designs requiring two MOSFETs?
The 2N7002DW is generally preferable when two N-channel MOSFETs are needed in a small area, because it integrates two isolated MOSFETs in a single 6-pin SOT-363 package, reducing component count and board space compared with using two separate 2N7002NXAKR devices. Final selection should account for per-channel current, power dissipation, and thermal derating specified in the manufacturer datasheet.
Do both the 2N7002DW and 2N7002NXAKR support the same operating temperature range?
Both are typically specified for an operating junction temperature range of -55 °C to +150 °C, which is common for 2N7002-family small-signal MOSFETs. However, actual allowable power dissipation and continuous current depend on the package thermal resistance and PCB layout. Confirm the exact temperature and thermal ratings from the specific manufacturer datasheet before use in a design.
Are the 2N7002DW and 2N7002NXAKR RoHS compliant?
RoHS compliance depends on the specific manufacturer and ordering part number. Many current 2N7002DW and 2N7002NXAKR products are offered as RoHS-compliant and halogen-free, but this must be verified from the manufacturer's datasheet, product page, or an authorized distributor such as DigiKey, Mouser, TTI, or Future Electronics for the exact orderable part number.