2N7002A-7
Diodes Incorporated
- Lifecycle
- Active
- Stock
- 1569 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
This in-depth comparison of the 2N7002A-7 and 2N7002LT1G provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.
Replacement verdict
The 2N7002LT1G and 2N7002A-7 are functionally compatible N-channel MOSFETs with matching voltage, current, and package characteristics, making them suitable drop-in replacement candidates for most low-power switching applications. Designers should verify gate threshold tolerances and thermal derating in their specific circuit conditions before final qualification.
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | 2N7002A-7 | 2N7002LT1G |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 180mA (Ta) | 115mA (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 6Ohm @ 115mA, 5V | 7.5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA | 2.5V @ 250µA |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 23 pF @ 25 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 370mW (Ta) | 225mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |