FDG6301N vs FDG6302P Comparison
This in-depth comparison of the FDG6301N and FDG6302P provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
SC-88
Description
MOSFET 2N-CH 25V 0.22A SC88
MOSFET 2P-CH 25V 0.14A SC70-6
Supplier
-
onsemi
Part Status
Obsolete
Obsolete
FET Type
-
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Logic Level Gate
Drain to Source Voltage (Vdss)
25V
25V
Current - Continuous Drain(Id) @ 25°C
-
140mA
Rds On(Max) @ Id Vgs
-
10Ohm @ 140mA, 4.5V
Vgs(th)(Max) @ Id
-
1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
-
0.31nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds
-
12pF @ 10V
Power - Max
300mW
300mW
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Base Product Number
FDG6301
-
Technology
MOSFET (Metal Oxide)
-
Configuration
2 N-Channel (Dual)
-
Current - Continuous Drain (Id) @ 25°C
220mA
-
Rds On (Max) @ Id, Vgs
4Ohm @ 220mA, 4.5V
-
Vgs(th) (Max) @ Id
1.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
0.4nC @ 4.5V
-
Input Capacitance (Ciss) (Max) @ Vds
9.5pF @ 10V
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
