FDG6301N vs FDG6314P Comparison

This in-depth comparison of the FDG6301N and FDG6314P provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
FDG6301N

+BOM

7191 PCS | onsemi
FDG6314P

+BOM

9279 PCS | onsemi
Package SC-88
Description MOSFET 2N-CH 25V 0.22A SC88 MOSFET 2P-CH 25V SC70-6
Supplier - onsemi
Part Status Obsolete Obsolete
FET Type - 2 P-Channel (Dual)
FET Feature Logic Level Gate Standard
Drain to Source Voltage (Vdss) 25V 25V
Mounting Type Surface Mount Surface Mount
Base Product Number FDG6301 -
Technology MOSFET (Metal Oxide) -
Configuration 2 N-Channel (Dual) -
Current - Continuous Drain (Id) @ 25°C 220mA -
Rds On (Max) @ Id, Vgs 4Ohm @ 220mA, 4.5V -
Vgs(th) (Max) @ Id 1.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V -
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V -
Power - Max 300mW -
Operating Temperature -55°C ~ 150°C (TJ) -
Packaging Cut Tape (CT), Tape & Reel (TR) -
Comparison Model : FDG6301N FDG6314P

+BOM RFQ