FDG6301N vs FDG6313N Comparison
This in-depth comparison of the FDG6301N and FDG6313N provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
Description
MOSFET 2N-CH 25V 0.22A SC88
SMALL SIGNAL FIELD-EFFECT TRANSI
Supplier
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Rochester Electronics, LLC
Part Status
Obsolete
Active
Base Product Number
FDG6301
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Technology
MOSFET (Metal Oxide)
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Configuration
2 N-Channel (Dual)
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FET Feature
Logic Level Gate
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Drain to Source Voltage (Vdss)
25V
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Current - Continuous Drain (Id) @ 25°C
220mA
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Rds On (Max) @ Id, Vgs
4Ohm @ 220mA, 4.5V
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Vgs(th) (Max) @ Id
1.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
0.4nC @ 4.5V
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Input Capacitance (Ciss) (Max) @ Vds
9.5pF @ 10V
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Power - Max
300mW
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Operating Temperature
-55°C ~ 150°C (TJ)
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Mounting Type
Surface Mount
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Packaging
Cut Tape (CT), Tape & Reel (TR)
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