FDMC86262P vs FDMC8327L

This in-depth comparison of the FDMC86262P and FDMC8327L provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
FDMC86262P

+BOM

3095 PCS | onsemi
FDMC8327L

+BOM

6878 PCS | Fairchild Semiconductor
Package WDFN-8 WDFN-8
Description MOSFET P-CH 150V 2A/8.4A 8MLP POWER FIELD-EFFECT TRANSISTOR, 1
Series PowerTrench® PowerTrench®
ProductStatus Active Active
FETType P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V 40 V
Current-ContinuousDrain(Id)@25°C 2A (Ta), 8.4A (Tc) 12A (Ta), 14A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V 4.5V, 10V
RdsOn(Max)@IdVgs 307mOhm @ 2A, 10V 9.7mOhm @ 12A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 13 nC @ 10 V 26 nC @ 10 V
Vgs(Max) ±25V ±20V
InputCapacitance(Ciss)(Max)@Vds 885 pF @ 75 V 1850 pF @ 20 V
PowerDissipation(Max) 2.3W (Ta), 40W (Tc) 2.3W (Ta), 30W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount
Comparison Model : FDMC86262P FDMC8327L

+BOM RFQ