FDMC8030 vs FDMC8327L

This in-depth comparison of the FDMC8030 and FDMC8327L provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FDMC8030

onsemi

Lifecycle
Active
Stock
3544 PCS
Series
Transistors - FETs, MOSFETs - FET, MOSFET Arrays
+BOM RFQ
Part B

FDMC8327L

Fairchild Semiconductor

Lifecycle
Active
Stock
6878 PCS
Package
WDFN-8
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDMC8030 FDMC8327L
Series PowerTrench® PowerTrench®
Part Status Obsolete Active
FET Type - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V 40 V
Current - Continuous Drain(Id) @ 25°C - 12A (Ta), 14A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 9.7mOhm @ 12A, 10V
Vgs(th)(Max) @ Id - 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 26 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 1850 pF @ 20 V
Power Dissipation (Max) - 2.3W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number FDMC80 -
Configuration 2 N-Channel (Dual) -
FET Feature Logic Level Gate -
Current - Continuous Drain (Id) @ 25°C 12A -
Rds On (Max) @ Id, Vgs 10mOhm @ 12A, 10V -
Vgs(th) (Max) @ Id 2.8V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V -
Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 20V -
Power - Max 800mW -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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