FDMC8032L vs FDMC8327L

This in-depth comparison of the FDMC8032L and FDMC8327L provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
FDMC8032L

+BOM

6487 PCS | onsemi
FDMC8327L

+BOM

6878 PCS | Fairchild Semiconductor
Package PowerWDFN-8 PowerWDFN-8
Description MOSFET 2N-CH 40V 7A 8-MLP POWER FIELD-EFFECT TRANSISTOR, 1
Series PowerTrench® PowerTrench®
ProductStatus Active Active
FETType 2 N-Channel (Dual) N-Channel
Technology - MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40V 40 V
Current-ContinuousDrain(Id)@25°C 7A 12A (Ta), 14A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) - 4.5V, 10V
RdsOn(Max)@IdVgs 20mOhm @ 7A, 10V 9.7mOhm @ 12A, 10V
Vgs(th)(Max)@Id 3V @ 250µA 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 11nC @ 10V 26 nC @ 10 V
Vgs(Max) - ±20V
InputCapacitance(Ciss)(Max)@Vds 720pF @ 20V 1850 pF @ 20 V
PowerDissipation(Max) - 2.3W (Ta), 30W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount
FETFeature Logic Level Gate -
Power-Max 1.9W -
Comparison Model : FDMC8032L FDMC8327L

+BOM RFQ