FDMC8030 vs FDMC86262P

This in-depth comparison of the FDMC8030 and FDMC86262P provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
FDMC8030

+BOM

3544 PCS | onsemi
FDMC86262P

+BOM

3095 PCS | onsemi
Package PowerWDFN-8
Description MOSFET 2N-CH 40V 12A 8PWR33 MOSFET P-CH 150V 2A/8.4A 8MLP
Series PowerTrench® PowerTrench®
ProductStatus - Active
FETType - P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) - 150 V
Current-ContinuousDrain(Id)@25°C - 2A (Ta), 8.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) - 6V, 10V
RdsOn(Max)@IdVgs - 307mOhm @ 2A, 10V
Vgs(th)(Max)@Id - 4V @ 250µA
GateCharge(Qg)(Max)@Vgs - 13 nC @ 10 V
Vgs(Max) - ±25V
InputCapacitance(Ciss)(Max)@Vds - 885 pF @ 75 V
PowerDissipation(Max) - 2.3W (Ta), 40W (Tc)
OperatingTemperature - -55°C ~ 150°C (TJ)
MountingType - Surface Mount
Part Status Obsolete -
Base Product Number FDMC80 -
Configuration 2 N-Channel (Dual) -
FET Feature Logic Level Gate -
Rds On (Max) @ Id, Vgs 10mOhm @ 12A, 10V -
Power - Max 800mW -
Packaging Cut Tape (CT), Tape & Reel (TR) -
Comparison Model : FDMC8030 FDMC86262P

+BOM RFQ