FDS6675BZ vs FDS6630A

This in-depth comparison of the FDS6630A and FDS6675BZ provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
FDS6630A

+BOM

4912 PCS | onsemi
FDS6675BZ

+BOM

1384 PCS | onsemi
Package SOIC-8 SOIC-8
Description MOSFET N-CH 30V 6.5A 8SOIC MOSFET P-CH 30V 11A 8SOIC
Series PowerTrench® PowerTrench®
ProductStatus Obsolete Active
FETType N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V 30 V
Current-ContinuousDrain(Id)@25°C 6.5A (Ta) 11A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V 4.5V, 10V
RdsOn(Max)@IdVgs 38mOhm @ 6.5A, 10V 13mOhm @ 11A, 10V
Vgs(th)(Max)@Id 3V @ 250µA 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 7 nC @ 5 V 62 nC @ 10 V
Vgs(Max) ±20V ±25V
InputCapacitance(Ciss)(Max)@Vds 460 pF @ 15 V 2470 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount
Comparison Model : FDS6630A FDS6675BZ

+BOM RFQ