FDS6630A vs FDS6680A

This in-depth comparison of the FDS6680A and FDS6630A provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
FDS6680A

+BOM

5816 PCS | onsemi
FDS6630A

+BOM

4912 PCS | onsemi
Package SOIC-8 SOIC-8
Description MOSFET N-CH 30V 12.5A 8SOIC MOSFET N-CH 30V 6.5A 8SOIC
Series PowerTrench® PowerTrench®
ProductStatus Active Obsolete
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V 30 V
Current-ContinuousDrain(Id)@25°C 12.5A (Ta) 6.5A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V 4.5V, 10V
RdsOn(Max)@IdVgs 9.5mOhm @ 12.5A, 10V 38mOhm @ 6.5A, 10V
Vgs(th)(Max)@Id 3V @ 250µA 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 23 nC @ 5 V 7 nC @ 5 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 1620 pF @ 15 V 460 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount
Comparison Model : FDS6680A FDS6630A

+BOM RFQ