FDS6675BZ vs FDS6680A
This in-depth comparison of the FDS6680A and FDS6675BZ provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
SOIC-8
SOIC-8
Description
MOSFET N-CH 30V 12.5A 8SOIC
MOSFET P-CH 30V 11A 8SOIC
Series
PowerTrench®
PowerTrench®
ProductStatus
Active
Active
FETType
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)
30 V
30 V
Current-ContinuousDrain(Id)@25°C
12.5A (Ta)
11A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)
4.5V, 10V
4.5V, 10V
RdsOn(Max)@IdVgs
9.5mOhm @ 12.5A, 10V
13mOhm @ 11A, 10V
Vgs(th)(Max)@Id
3V @ 250µA
3V @ 250µA
GateCharge(Qg)(Max)@Vgs
23 nC @ 5 V
62 nC @ 10 V
Vgs(Max)
±20V
±25V
InputCapacitance(Ciss)(Max)@Vds
1620 pF @ 15 V
2470 pF @ 15 V
PowerDissipation(Max)
2.5W (Ta)
2.5W (Ta)
OperatingTemperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
MountingType
Surface Mount
Surface Mount
