IR2113PBF vs IR2118

This in-depth comparison of the IR2113PBF and IR2118 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IR2113PBF

+BOM

7002 PCS | Infineon Technologies
IR2118

+BOM

6707 PCS | Infineon Technologies
Package 14-DIP 8-DIP (0.300", 7.62mm)
Description IC GATE DRVR HALF-BRIDGE 14DIP IC GATE DRVR HIGH-SIDE 8DIP
ProductStatus Active Obsolete
DrivenConfiguration Half-Bridge High-Side
ChannelType Independent Single
NumberofDrivers 2 1
GateType IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage-Supply 3.3V ~ 20V 10V ~ 20V
LogicVoltage-VILVIH 6V, 9.5V 6V, 9.5V
Current-PeakOutput(SourceSink) 2A, 2A 250mA, 500mA
InputType Non-Inverting Inverting
HighSideVoltage-Max(Bootstrap) 600 V 600 V
Rise/FallTime(Typ) 25ns, 17ns 80ns, 40ns
OperatingTemperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
MountingType Through Hole Through Hole
Comparison Model : IR2113PBF IR2118

+BOM RFQ