IRF7341GTRPBF vs IRF7389 Comparison
This in-depth comparison of the IRF7341GTRPBF and IRF7389 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SO-8
SOIC-8
Description
MOSFET N-CH 55V 5.1A
MOSFET N/P-CH 30V 8-SOIC
Supplier
-
Infineon Technologies
Series
HEXFET®
HEXFET®
Part Status
Active
Obsolete
FET Type
2 N-Channel (Dual)
N and P-Channel
FET Feature
Standard
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
30V
Rds On(Max) @ Id Vgs
50mOhm @ 5.1A, 10V
29mOhm @ 5.8A, 10V
Vgs(th)(Max) @ Id
1V @ 250µA (Min)
1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
44nC @ 10V
33nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds
780pF @ 25V
650pF @ 25V
Power - Max
2.4W
2.5W
Operating Temperature
-55°C ~ 175°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Current - Continuous Drain(Id) @ 25°C
5.1A
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