IRF7342PBF vs IRF7389TR Comparison

This in-depth comparison of the IRF7342PBF and IRF7389TR provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRF7342PBF

+BOM

2889 PCS | Infineon Technologies
IRF7389TR

+BOM

3343 PCS | Infineon Technologies
Package SOIC-8 SOIC-8
Description MOSFET 2P-CH 55V 3.4A 8-SOIC MOSFET N/P-CH 30V 8-SOIC
Supplier - Infineon Technologies
Series HEXFET® HEXFET®
Part Status Discontinued at Digi-Key Obsolete
FET Type 2 P-Channel (Dual) N and P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 55V 30V
Rds On(Max) @ Id Vgs 105mOhm @ 3.4A, 10V 29mOhm @ 5.8A, 10V
Vgs(th)(Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 38nC @ 10V 33nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 690pF @ 25V 650pF @ 25V
Power - Max 2W 2.5W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Current - Continuous Drain(Id) @ 25°C 3.4A -
Comparison Model : IRF7342PBF IRF7389TR

+BOM RFQ