IRF7343TRPBF vs IRF7389TRPBF Comparison
This in-depth comparison of the IRF7389TRPBF and IRF7343TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SO-8
SO-8
Description
MOSFET N/P-CH 30V 8-SOIC
MOSFET N/P-CH 55V 8-SOIC
Series
HEXFET®
HEXFET®
Part Status
Active
Active
FET Type
N and P-Channel
N and P-Channel
FET Feature
Logic Level Gate
Standard
Drain to Source Voltage (Vdss)
30V
55V
Rds On(Max) @ Id Vgs
29mOhm @ 5.8A, 10V
50mOhm @ 4.7A, 10V
Vgs(th)(Max) @ Id
1V @ 250µA
1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
33nC @ 10V
36nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds
650pF @ 25V
740pF @ 25V
Power - Max
2.5W
2W
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Current - Continuous Drain(Id) @ 25°C
-
4.7A, 3.4A
