IRF7380PBF vs IRF7341PBF

This in-depth comparison of the IRF7341PBF and IRF7380PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRF7341PBF

+BOM

4680 PCS | Infineon Technologies
IRF7380PBF

+BOM

3152 PCS | Infineon Technologies
Package SOIC-8 SOIC-8
Description MOSFET 2N-CH 55V 4.7A 8-SOIC MOSFET 2N-CH 80V 3.6A 8-SOIC
Supplier Rochester Electronics, LLC,Infineon Technologies Infineon Technologies,Rochester Electronics, LLC
Series HEXFET® HEXFET®
ProductStatus Discontinued at Digi-Key Discontinued at Digi-Key
FETType 2 N-Channel (Dual) 2 N-Channel (Dual)
FETFeature Logic Level Gate Logic Level Gate
DraintoSourceVoltage(Vdss) 55V 80V
Current-ContinuousDrain(Id)@25°C 4.7A 3.6A
RdsOn(Max)@IdVgs 50mOhm @ 4.7A, 10V 73mOhm @ 2.2A, 10V
Vgs(th)(Max)@Id 1V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 36nC @ 10V 23nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 740pF @ 25V 660pF @ 25V
Power-Max 2W 2W
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount
Comparison Model : IRF7341PBF IRF7380PBF

+BOM RFQ