IRF9317TRPBF vs IRF9358PBF Comparison
This in-depth comparison of the IRF9358PBF and IRF9317TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SOIC-8
Description
MOSFET 2P-CH 30V 9.2A 8SO
MOSFET P-CH 30V 16A 8SO
Series
HEXFET®
HEXFET®
Part Status
Discontinued at Digi-Key
Active
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
-
FET Feature
Logic Level Gate
-
Drain to Source Voltage (Vdss)
30V
30 V
Current - Continuous Drain (Id) @ 25°C
9.2A
-
Rds On (Max) @ Id, Vgs
16.3mOhm @ 9.2A, 10V
-
Vgs(th) (Max) @ Id
2.4V @ 25µA
-
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
-
Input Capacitance (Ciss) (Max) @ Vds
1740pF @ 25V
-
Power - Max
2W
-
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Base Product Number
IRF9358
-
FET Type
-
P-Channel
Current - Continuous Drain(Id) @ 25°C
-
16A (Ta)
Drive Voltage(Max Rds On Min Rds On)
-
4.5V, 10V
Rds On(Max) @ Id Vgs
-
6.6mOhm @ 16A, 10V
Vgs(th)(Max) @ Id
-
2.4V @ 50µA
Gate Charge(Qg)(Max) @ Vgs
-
92 nC @ 10 V
Vgs(Max)
-
±20V
Input Capacitance(Ciss)(Max) @ Vds
-
2820 pF @ 15 V
Power Dissipation (Max)
-
2.5W (Ta)
