IRF9358TRPBF vs IRF9388TRPBF Comparison
This in-depth comparison of the IRF9358TRPBF and IRF9388TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SO-8
SO-8
Description
MOSFET 2P-CH 30V 9.2A 8SOIC
MOSFET P-CH 30V 12A 8SO
Series
HEXFET®
HEXFET®
Part Status
Active
Active
FET Type
2 P-Channel (Dual)
P-Channel
Technology
-
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
30 V
Current - Continuous Drain(Id) @ 25°C
9.2A
12A (Ta)
Drive Voltage(Max Rds On Min Rds On)
-
10V, 20V
Rds On(Max) @ Id Vgs
16.3mOhm @ 9.2A, 10V
8.5mOhm @ 12A, 20V
Vgs(th)(Max) @ Id
2.4V @ 25µA
2.4V @ 25µA
Gate Charge(Qg)(Max) @ Vgs
38nC @ 10V
52 nC @ 10 V
Vgs(Max)
-
±25V
Input Capacitance(Ciss)(Max) @ Vds
1740pF @ 25V
1680 pF @ 25 V
Power Dissipation (Max)
-
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
FET Feature
Logic Level Gate
-
Power - Max
2W
-
