IRF9389TRPBF vs IRF9388TRPBF

This in-depth comparison of the IRF9389TRPBF and IRF9388TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF9389TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 2112 PCS
Package: SO-8
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

Part B

IRF9388TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 1405 PCS
Package: SO-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF9389TRPBF	IRF9388TRPBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N and P-Channel	P-Channel
Technology	-	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V	30 V
Current - Continuous Drain(Id) @ 25°C	6.8A, 4.6A	12A (Ta)
Drive Voltage(Max Rds On Min Rds On)	-	10V, 20V
Rds On(Max) @ Id Vgs	27mOhm @ 6.8A, 10V	8.5mOhm @ 12A, 20V
Vgs(th)(Max) @ Id	2.3V @ 10µA	2.4V @ 25µA
Gate Charge(Qg)(Max) @ Vgs	14nC @ 10V	52 nC @ 10 V
Vgs(Max)	-	±25V
Input Capacitance(Ciss)(Max) @ Vds	398pF @ 15V	1680 pF @ 25 V
Power Dissipation (Max)	-	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
FET Feature	Logic Level Gate	-
Power - Max	2W	-

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