IRF9389TRPBF vs IRF9310PBF Comparison
This in-depth comparison of the IRF9389TRPBF and IRF9310PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SO-8
SO-8
Description
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
MOSFET P-CH 30V 20A 8SO
Series
HEXFET®
HEXFET®
Part Status
Active
Discontinued at Digi-Key
FET Type
N and P-Channel
P-Channel
Technology
-
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
30 V
Current - Continuous Drain(Id) @ 25°C
6.8A, 4.6A
20A (Tc)
Drive Voltage(Max Rds On Min Rds On)
-
4.5V, 10V
Rds On(Max) @ Id Vgs
27mOhm @ 6.8A, 10V
4.6mOhm @ 20A, 10V
Vgs(th)(Max) @ Id
2.3V @ 10µA
2.4V @ 100µA
Gate Charge(Qg)(Max) @ Vgs
14nC @ 10V
165 nC @ 10 V
Vgs(Max)
-
±20V
Input Capacitance(Ciss)(Max) @ Vds
398pF @ 15V
5250 pF @ 15 V
Power Dissipation (Max)
-
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
FET Feature
Logic Level Gate
-
Power - Max
2W
-
