IRF9540NPBF vs IRF9540

This in-depth comparison of the IRF9540 and IRF9540NPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRF9540

+BOM

4649 PCS | Vishay Siliconix
IRF9540NPBF

+BOM

6653 PCS | Infineon Technologies
Package TO-220-3 TO-220-3
Description MOSFET P-CH 100V 19A TO220AB MOSFET P-CH 100V 23A TO220AB
ProductStatus Obsolete Active
FETType P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V 100 V
Current-ContinuousDrain(Id)@25°C 19A (Tc) 23A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 200mOhm @ 11A, 10V 117mOhm @ 11A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 61 nC @ 10 V 97 nC @ 10 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 1400 pF @ 25 V 1300 pF @ 25 V
PowerDissipation(Max) 150W (Tc) 140W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole
Series - HEXFET®
Comparison Model : IRF9540 IRF9540NPBF

+BOM RFQ