IRFB3307ZPBF vs IRFB38N20DPBF

This in-depth comparison of the IRFB3307ZPBF and IRFB38N20DPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFB3307ZPBF

International Rectifier

Lifecycle
Active
Stock
2255 PCS
Package
TO-220AB
Series
Specialized ICs
+BOM RFQ
Part B

IRFB38N20DPBF

Infineon Technologies

Lifecycle
Active
Stock
6086 PCS
Package
TO-220
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFB3307ZPBF IRFB38N20DPBF
Series - HEXFET®
Part Status Active Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 200 V
Current - Continuous Drain(Id) @ 25°C - 43A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 10V
Rds On(Max) @ Id Vgs - 54mOhm @ 26A, 10V
Vgs(th)(Max) @ Id - 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 91 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 2900 pF @ 25 V
Power Dissipation (Max) - 3.8W (Ta), 300W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type - Through Hole
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