IRFB3206PBF vs IRFB3307ZPBF Comparison

This in-depth comparison of the IRFB3307ZPBF and IRFB3206PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB3307ZPBF

+BOM

2255 PCS | International Rectifier
IRFB3206PBF

+BOM

6622 PCS | Infineon Technologies
Package TO-220AB TO-220-3
Description IRFB3307 - 12V-300V N-CHANNEL PO MOSFET N-CH 60V 120A TO220AB
Part Status Active Active
Series - HEXFET®
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 60 V
Current - Continuous Drain(Id) @ 25°C - 120A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 10V
Rds On(Max) @ Id Vgs - 3mOhm @ 75A, 10V
Vgs(th)(Max) @ Id - 4V @ 150µA
Gate Charge(Qg)(Max) @ Vgs - 170 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 6540 pF @ 50 V
Power Dissipation (Max) - 300W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type - Through Hole
Comparison Model : IRFB3307ZPBF IRFB3206PBF

+BOM RFQ