IRFB3306PBF vs IRFB3307ZPBF

This in-depth comparison of the IRFB3307ZPBF and IRFB3306PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB3307ZPBF

+BOM

2255 PCS | International Rectifier
IRFB3306PBF

+BOM

3253 PCS | Infineon Technologies
Package TO-220AB TO-220-3
Description IRFB3307 - 12V-300V N-CHANNEL PO MOSFET N-CH 60V 120A TO220AB
ProductStatus Active Active
Series - HEXFET®
FETType - N-Channel
Technology - MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) - 60 V
Current-ContinuousDrain(Id)@25°C - 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) - 10V
RdsOn(Max)@IdVgs - 4.2mOhm @ 75A, 10V
Vgs(th)(Max)@Id - 4V @ 150µA
GateCharge(Qg)(Max)@Vgs - 120 nC @ 10 V
Vgs(Max) - ±20V
InputCapacitance(Ciss)(Max)@Vds - 4520 pF @ 50 V
PowerDissipation(Max) - 230W (Tc)
OperatingTemperature - -55°C ~ 175°C (TJ)
MountingType - Through Hole
Comparison Model : IRFB3307ZPBF IRFB3306PBF

+BOM RFQ