IRFB4615PBF vs IRFB4110PBF

This in-depth comparison of the IRFB4110PBF and IRFB4615PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB4110PBF

+BOM

7679 PCS | Infineon Technologies
IRFB4615PBF

+BOM

7060 PCS | International Rectifier
Package TO-220 TO-220-3
Description MOSFET N-CH 100V 120A TO220AB IRFB4615 - 12V-300V N-CHANNEL PO
Series HEXFET® HEXFET®
ProductStatus Active Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V 150 V
Current-ContinuousDrain(Id)@25°C 120A (Tc) 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 4.5mOhm @ 75A, 10V 39mOhm @ 21A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 210 nC @ 10 V 26 nC @ 10 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 9620 pF @ 50 V 1750 pF @ 50 V
PowerDissipation(Max) 370W (Tc) 144W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole
Comparison Model : IRFB4110PBF IRFB4615PBF

+BOM RFQ