2EDN7524FXTMA1

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2EDN7524FXTMA1

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IC GATE DRVR LOW-SIDE DSO8-60

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Specifications

Attribute Value
Package Tape & Reel (TR),Cut Tape (CT)
Series EiceDriver™
ProductStatus Active
DrivenConfiguration Low-Side
ChannelType Independent
NumberofDrivers 2
GateType N-Channel MOSFET
Voltage-Supply 4.5V ~ 20V
Current-PeakOutput(SourceSink) 5A, 5A
InputType Non-Inverting
Rise/FallTime(Typ) 5.3ns, 4.5ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Overview

Description

2EDN7524FXTMA1 is a dual N-channel enhancement-mode MOSFET in a single compact package, designed for power-switching in modern DC-DC converters, load switches, and motor drivers. It combines two identical MOSFET dies in one module to save board space and reduce parasitics, enabling efficient, high-speed switching.
Key points:
- Technology: trench-style MOSFETs for low Rds(on) and fast switching
- Configuration: two N-channel MOSFETs in one device (per-device Vds and Id shown in the datasheet)
- Packaging: compact SMT package (TMA1 variant); consider thermal dissipation in your design
- Applications: synchronous buck/boost converters, motor drivers, power-switching stages, battery-powered systems
- Data: check the official datasheet for exact electrical specs, allowed operating conditions, and recommended circuit layouts
For precise values and to ensure correct application, refer to the manufacturer’s datasheet and product page.

Pinout

- Pin count: 8 pins
- Function: Dual N-channel enhancement-mode MOSFET pair in one package (common configuration for switching/half-bridge applications).

Manufacturer

Manufacturer: Renesas Electronics Corporation (Renesas).
What kind of company: A Japanese multinational semiconductor company that designs and manufactures microcontrollers, analog and power ICs, and other semiconductor solutions for automotive, industrial, and consumer markets.

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