CSD86356Q5D

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CSD86356Q5D

+BOM

25V POWERBLOCK N CH MOSFET

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Specifications

Attribute Value
Supplier Texas Instruments
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain(Id) @ 25°C 40A (Ta)
Rds On(Max) @ Id Vgs 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V
Vgs(th)(Max) @ Id 1.85V @ 250µA, 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 7.9nC @ 4.5V, 19.3nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 1040pF @ 12.5V, 2510pF @ 12.5V
Power - Max 12W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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