IR2213S

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IR2213S

+BOM

IC GATE DRVR HALF-BRIDGE 16SOIC

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Specifications

Attribute Value
Package Tube
ProductStatus Obsolete
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType IGBT, N-Channel MOSFET
Voltage-Supply 12V ~ 20V
LogicVoltage-VILVIH 6V, 9.5V
Current-PeakOutput(SourceSink) 2A, 2.5A
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 1200 V
Rise/FallTime(Typ) 25ns, 17ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 16-SOIC (0.295, 7.50mm Width)

Overview

Description

"Introduction to IR2213S" likely refers to a course or module that deals with introductory concepts in International Relations (IR), possibly offered at an academic institution. This course would typically cover foundational theories and frameworks used to analyze global politics, international conflicts, diplomacy, and cooperation among states. Key topics might include the history of the international system, the role of international organizations like the United Nations, the impact of globalization, and the study of power dynamics and foreign policy.
Students may also explore different theoretical perspectives such as realism, liberalism, and constructivism, which provide diverse lenses through which to understand international events and policies. The curriculum could involve case studies to illustrate concepts and might require essays, discussions, and examinations to assess understanding and critical thinking. By the end of the course, students are expected to gain a foundational understanding of how international relations shape the world and influence global issues such as security, trade, and human rights.

Equivalent

The IR2213S is a high-voltage, high-speed power MOSFET and IGBT driver. Equivalent products include:
1. IRS2213S - Another variant from Infineon with similar specifications.
2. MIC4422 - A high-speed MOSFET driver from Microchip Technology.
3. UCC27322 - A Texas Instruments high-speed MOSFET and IGBT driver.
4. IXDD609 - A high-speed MOSFET driver from IXYS.
Always verify the specifications for compatibility with your application.

Features

The IR2213S is a high-voltage, high-speed power MOSFET and IGBT driver designed for half-bridge configurations. Key features include:
1. High Voltage Capability: Operates with a high voltage level suitable for driving power devices.
2. High-Speed Operation: Offers fast switching to improve efficiency in power conversion applications.
3. Floating Channel Technology: Capable of driving high-side and low-side switches with independent references.
4. Dead-Time Control: Built-in functionality to prevent shoot-through by ensuring a safe delay between high-side and low-side switch activation.
5. Undervoltage Lockout (UVLO): Protects the system by preventing operation when supply voltage is too low.
6. Integrated Bootstrap Diode: Facilitates efficient high-side drive by simplifying the bootstrap circuit design.
7. Protection Features: Includes various protections like desaturation detection for IGBTs to enhance system reliability.
8. Compact Package: Available in a small, surface-mount package for easy integration into various applications.
These features make the IR2213S suitable for applications like motor drives, induction heating, and other industrial power management systems.

Pinout

The IR2213S is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is specifically designed to drive power MOSFETs and IGBTs in half-bridge and full-bridge topologies.
The IR2213S comes in an SOIC-20 (Small Outline Integrated Circuit) package, which implies it has 20 pins. The key functions of the IR2213S include providing independent high-side and low-side gate drive, level shifting, and having a high voltage range to support various power applications. It typically features under-voltage lockout protection, dead-time control to prevent shoot-through, and desaturation detection for protection against over-current conditions.
The device is ideal for motor control, power supply, and inverter applications where robust and efficient high-voltage drive is required.

Manufacturer

The IR2213S is manufactured by Infineon Technologies, which is a semiconductor company. Infineon is a German company that specializes in the design, development, and manufacturing of a wide range of semiconductor products. These include power semiconductors, automotive systems, microcontrollers, security ICs, and sensors. Infineon is known for its contributions to the automotive, industrial, and consumer electronics sectors, providing solutions that enhance energy efficiency, mobility, and security. Initially, the IR2213S was developed by International Rectifier, which was acquired by Infineon Technologies in 2015. The acquisition allowed Infineon to expand its portfolio in power management and semiconductor technologies, solidifying its position as a leading player in the semiconductor industry.

Application

The IR2213S is a high-voltage, high-speed power MOSFET and IGBT driver commonly used in various applications. Its primary application areas include motor control systems, where it drives high-power motors with precision and efficiency. It is also utilized in industrial automation for controlling actuators and solenoids. The driver is suitable for use in power supply units and inverter circuits, enabling efficient energy conversion. Additionally, it finds applications in renewable energy systems, such as solar inverters, due to its ability to handle high voltages and currents. The IR2213S is also employed in electric vehicles for managing the power stages of electric drive systems.

Package

The IR2213S is housed in a 16-lead SOIC (Small Outline Integrated Circuit) package. This type of package is commonly used for surface-mount technology, offering a compact form factor suitable for various electronic applications.