2N7002,215 vs 2N7002CK

This in-depth comparison of the 2N7002,215 and 2N7002CK provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002CK is a viable functional replacement candidate for the 2N7002,215 in most low-power switching applications, with identical drain-source voltage, continuous drain current, and package footprint. Designers should validate gate threshold voltage tolerance and gate charge characteristics against the target circuit's drive and switching-speed requirements before committing to production.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Parts at a glance

Part A

2N7002,215

Nexperia USA Inc.

Lifecycle
Active
Stock
6582 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
Part B

2N7002CK

Nexperia USA Inc.

Lifecycle
Active
Stock
1570 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002,215 2N7002CK
Part Status Active Active
Series TrenchMOS™ -
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 10V -
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V -
Vgs(th)(Max) @ Id 2.5V @ 250µA -
Vgs(Max) ±30V -
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 10 V -
Power Dissipation (Max) 830mW (Ta) -
Operating Temperature -65°C ~ 150°C (TJ) -
Mounting Type Surface Mount -