2N7002,215 vs 2N7002E-T1-E3

This in-depth comparison of the 2N7002,215 and 2N7002E-T1-E3 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002E-T1-E3 is a compatible functional replacement candidate for the 2N7002,215 in most low-power switching applications, with both devices sharing identical N-channel MOSFET functionality, SOT-23 footprint, and comparable voltage ratings. Designers should validate gate threshold voltage tolerances and thermal performance under application-specific load conditions before finalizing the substitution.

Drain-Source Voltage Rating High match

Continuous Drain Current High match

Package Type High match

Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002,215

Nexperia USA Inc.

Lifecycle: Active
Stock: 6582 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

2N7002E-T1-E3

Vishay Siliconix

Lifecycle: Active
Stock: 7566 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002,215	2N7002E-T1-E3
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain(Id) @ 25°C	300mA (Ta)	240mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	10V	4.5V, 10V
Rds On(Max) @ Id Vgs	5Ohm @ 500mA, 10V	3Ohm @ 250mA, 10V
Vgs(th)(Max) @ Id	2.5V @ 250µA	2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	-	0.6 nC @ 4.5 V
Vgs(Max)	±30V	±20V
Input Capacitance(Ciss)(Max) @ Vds	50 pF @ 10 V	21 pF @ 5 V
Power Dissipation (Max)	830mW (Ta)	350mW (Ta)
Operating Temperature	-65°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Series	TrenchMOS™	-

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