2N7002DW vs 2N7002E

This in-depth comparison of the 2N7002E and 2N7002DW provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
2N7002E

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3552 PCS | Panasonic Electronic Components
2N7002DW

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6631 PCS | onsemi
Package SOT23-3
Description MOSFET N-CH 60V 300MA SOT23-3 MOSFET 2N-CH 60V 0.115A SC88
ProductStatus Obsolete -
FETType N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V -
Current-ContinuousDrain(Id)@25°C 300mA (Ta) -
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V -
RdsOn(Max)@IdVgs 3Ohm @ 100mA, 10V -
Vgs(th)(Max)@Id 3V @ 250µA -
GateCharge(Qg)(Max)@Vgs 0.8 nC @ 4.5 V -
Vgs(Max) ±20V -
InputCapacitance(Ciss)(Max)@Vds 40 pF @ 10 V -
PowerDissipation(Max) 350mW (Ta) -
OperatingTemperature 150°C (TJ) -
MountingType Surface Mount -
Part Status - Active
Base Product Number - 2N7002
Configuration - 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Rds On (Max) @ Id, Vgs - 7.5Ohm @ 50mA, 5V
Power - Max - 200mW
Packaging - Cut Tape (CT), Tape & Reel (TR)
Comparison Model : 2N7002E 2N7002DW

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