2N7002E vs 2N7002DW

This in-depth comparison of the 2N7002E and 2N7002DW provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002DW and 2N7002E are both 60 V logic-level N-channel MOSFETs sharing the same SOT-363 (SC-88) package and similar RDS(on) characteristics, making the 2N7002DW a viable functional replacement candidate for the 2N7002E in most low-power switching applications. However, the 2N7002DW integrates two electrically isolated MOSFETs in a single package, whereas the 2N7002E is a single-device part, so designers must account for the dual-channel configuration and verify continuous current and thermal derating against the target circuit requirements before substituting.

Channel Configuration High match
Package Type High match
Continuous Drain Current Validation required
Drain-Source Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002E

Panasonic Electronic Components

Lifecycle
Active
Stock
3552 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

2N7002DW

onsemi

Lifecycle
Active
Stock
6631 PCS
Series
Transistors - FETs, MOSFETs - FET, MOSFET Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E 2N7002DW
Part Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Rds On(Max) @ Id Vgs 3Ohm @ 100mA, 10V -
Vgs(th)(Max) @ Id 3V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 0.8 nC @ 4.5 V -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 40 pF @ 10 V -
Power Dissipation (Max) 350mW (Ta) -
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number - 2N7002
Configuration - 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Current - Continuous Drain (Id) @ 25°C - 115mA
Rds On (Max) @ Id, Vgs - 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id - 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds - 50pF @ 25V
Power - Max - 200mW
Packaging - Cut Tape (CT), Tape & Reel (TR)
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