CSD87312Q3E vs CSD87313DMS Comparison
This in-depth comparison of the CSD87312Q3E and CSD87313DMS provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
TDFN-8
WDFN-8
Description
MOSFET 2N-CH 30V 27A 8VSON
MOSFET 2 N-CHANNEL 30V 8WSON
Supplier
-
Texas Instruments
Series
NexFET™
NexFET™
Part Status
Active
Active
FET Type
2 N-Channel (Dual) Common Source
2 N-Channel (Dual) Common Drain
FET Feature
Logic Level Gate
Standard
Drain to Source Voltage (Vdss)
30V
30V
Vgs(th)(Max) @ Id
1.3V @ 250µA
1.25V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
8.2nC @ 4.5V
28nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds
1250pF @ 15V
4290pF @ 15V
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Current - Continuous Drain(Id) @ 25°C
27A
-
Rds On(Max) @ Id Vgs
33mOhm @ 7A , 8V
-
Power - Max
2.5W
-
