CSD87335Q3D vs CSD87351Q5D

This in-depth comparison of the CSD87335Q3D and CSD87351Q5D provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

CSD87335Q3D

Texas Instruments

Lifecycle
Active
Stock
6547 PCS
Series
Transistors - FETs, MOSFETs - FET, MOSFET Arrays
+BOM RFQ
Part B

CSD87351Q5D

Texas Instruments

Lifecycle
Active
Stock
2861 PCS
Package
LDFN-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification CSD87335Q3D CSD87351Q5D
Series NexFET™ NexFET™
Part Status Active Active
Base Product Number CSD87335Q3 -
Technology MOSFET (Metal Oxide) -
Configuration 2 N-Channel (Dual) Asymmetrical -
Drain to Source Voltage (Vdss) 30V 30V
Vgs(th) (Max) @ Id 1.9V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V -
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 15V -
Power - Max 6W 12W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
FET Type - 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Current - Continuous Drain(Id) @ 25°C - 32A
Rds On(Max) @ Id Vgs - 7.6mOhm @ 20A, 8V
Vgs(th)(Max) @ Id - 2.1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 7.7nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds - 1255pF @ 15V
Compare RFQ