CSD87335Q3D vs CSD87352Q5D

This in-depth comparison of the CSD87335Q3D and CSD87352Q5D provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

CSD87335Q3D

Texas Instruments

Lifecycle
Active
Stock
6547 PCS
Series
Transistors - FETs, MOSFETs - FET, MOSFET Arrays
+BOM RFQ
Part B

CSD87352Q5D

Texas Instruments

Lifecycle
Active
Stock
7750 PCS
Package
LDFN-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification CSD87335Q3D CSD87352Q5D
Series NexFET™ NexFET™
Part Status Active Active
Base Product Number CSD87335Q3 -
Technology MOSFET (Metal Oxide) -
Configuration 2 N-Channel (Dual) Asymmetrical -
Drain to Source Voltage (Vdss) 30V 30V
Vgs(th) (Max) @ Id 1.9V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V -
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 15V -
Power - Max 6W 8.5W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
FET Type - 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Current - Continuous Drain(Id) @ 25°C - 25A
Vgs(th)(Max) @ Id - 1.15V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 12.5nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds - 1800pF @ 15V
Compare RFQ