CSD87350Q5D vs CSD87335Q3D Comparison
This in-depth comparison of the CSD87335Q3D and CSD87350Q5D provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
LDFN-8
Description
MOSFET 2N-CH 30V 8LSON
MOSFET 2N-CH 30V 40A 8LSON
Series
NexFET™
NexFET™
Part Status
Active
Active
Base Product Number
CSD87335Q3
-
Technology
MOSFET (Metal Oxide)
-
Configuration
2 N-Channel (Dual) Asymmetrical
-
Drain to Source Voltage (Vdss)
30V
30V
Vgs(th) (Max) @ Id
1.9V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
7.4nC @ 4.5V
-
Input Capacitance (Ciss) (Max) @ Vds
1050pF @ 15V
-
Power - Max
6W
12W
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Packaging
Cut Tape (CT), Tape & Reel (TR)
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FET Type
-
2 N-Channel (Dual)
FET Feature
-
Logic Level Gate
Current - Continuous Drain(Id) @ 25°C
-
40A
Rds On(Max) @ Id Vgs
-
5.9mOhm @ 20A, 8V
Vgs(th)(Max) @ Id
-
2.1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
-
10.9nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds
-
1770pF @ 15V
