CSD87335Q3D vs CSD87313DMS Comparison
This in-depth comparison of the CSD87335Q3D and CSD87313DMS provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
WDFN-8
Description
MOSFET 2N-CH 30V 8LSON
MOSFET 2 N-CHANNEL 30V 8WSON
Supplier
-
Texas Instruments
Series
NexFET™
NexFET™
Part Status
Active
Active
FET Type
-
2 N-Channel (Dual) Common Drain
FET Feature
-
Standard
Drain to Source Voltage (Vdss)
30V
30V
Vgs(th)(Max) @ Id
-
1.25V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
-
28nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds
-
4290pF @ 15V
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Base Product Number
CSD87335Q3
-
Technology
MOSFET (Metal Oxide)
-
Configuration
2 N-Channel (Dual) Asymmetrical
-
Vgs(th) (Max) @ Id
1.9V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
7.4nC @ 4.5V
-
Input Capacitance (Ciss) (Max) @ Vds
1050pF @ 15V
-
Power - Max
6W
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
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