FDG6306P vs FDG6332C-PG Comparison

This in-depth comparison of the FDG6306P and FDG6332C-PG provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
FDG6306P

+BOM

20835 PCS | onsemi
FDG6332C-PG

+BOM

3818 PCS | onsemi
Package SC-88 SC-88
Description MOSFET 2P-CH 20V 600MA SC88 MOSFET N P-CH 20V SC70-6
Supplier onsemi,Rochester Electronics, LLC onsemi
Series PowerTrench® PowerTrench®
Part Status Active Obsolete
FET Type 2 P-Channel (Dual) N and P-Channel Complementary
FET Feature Logic Level Gate Standard
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain(Id) @ 25°C 600mA 700mA (Ta), 600mA (Ta)
Rds On(Max) @ Id Vgs 420mOhm @ 600mA, 4.5V 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 2nC @ 4.5V 1.5nC @ 4.5V, 2nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 114pF @ 10V 113pF @ 10V, 114pF @ 10V
Power - Max 300mW 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Comparison Model : FDG6306P FDG6332C-PG

+BOM RFQ