FDMC8030 vs FDMC8032L

This in-depth comparison of the FDMC8030 and FDMC8032L provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FDMC8030

onsemi

Lifecycle: Active
Stock: 3544 PCS
Series: Transistors - FETs, MOSFETs - FET, MOSFET Arrays

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Part B

FDMC8032L

onsemi

Lifecycle: Active
Stock: 6487 PCS
Package: WDFN-8
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	FDMC8030	FDMC8032L
Series	PowerTrench®	PowerTrench®
Part Status	Obsolete	Active
FET Type	-	2 N-Channel (Dual)
FET Feature	Logic Level Gate	Logic Level Gate
Drain to Source Voltage (Vdss)	40V	40V
Current - Continuous Drain(Id) @ 25°C	-	7A
Rds On(Max) @ Id Vgs	-	20mOhm @ 7A, 10V
Vgs(th)(Max) @ Id	-	3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	-	11nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds	-	720pF @ 20V
Power - Max	800mW	1.9W
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Base Product Number	FDMC80	-
Technology	MOSFET (Metal Oxide)	-
Configuration	2 N-Channel (Dual)	-
Current - Continuous Drain (Id) @ 25°C	12A	-
Rds On (Max) @ Id, Vgs	10mOhm @ 12A, 10V	-
Vgs(th) (Max) @ Id	2.8V @ 250µA	-
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V	-
Input Capacitance (Ciss) (Max) @ Vds	1975pF @ 20V	-
Packaging	Cut Tape (CT), Tape & Reel (TR)	-

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